欲ãããã®ãªã¹ãã«è¿œå ãããŸãã
欲ãããã®ãªã¹ãã«è¿œå ãããŸãã
ãåºã§åãåã
ïŒéæç¡æïŒ
åºèå
äœæ
å¶æ¥æé
åšåº«æ°
éžæåºè
ããã®è·é¢
賌å
¥åæ°
è¿ãã«åšåº«ã®ããåºèã¯ããããŸããã
é
éãã
倧å²åŒ ððŽðððŸðŒðåå€å±/ãã€ã©ã€ã/å°æ¯ãã€ã©ã€ã/ã¬ã€ã€ãŒ ãŠã£ãã°ã»ãšã¯ã¹ã
ãã®ååãè²·ã£ã人ã¯
ãããªååãè²·ã£ãŠããŸã
ãæ°ã«å
¥ããè§£é€ããŸããïŒ
倧å²åŒ ððŽðððŸðŒðåå€å±/ãã€ã©ã€ã/å°æ¯ãã€ã©ã€ã/ã¬ã€ã€ãŒ ãŠã£ãã°ã»ãšã¯ã¹ãã®è©³çްæ
å ±
ððŽðððŸðŒðåå€å±/ãã€ã©ã€ã/å°æ¯ãã€ã©ã€ã/ã¬ã€ã€ãŒãððŽðððŸðŒðåå€å±/ãã€ã©ã€ã/å°æ¯ãã€ã©ã€ã/ã¬ã€ã€ãŒãã·ãŒã¯ã¬ãããã€ã©ã€ã/ã¬ã€ã€ãŒã«ãã/çœé«ªãŒãã/代å®å±±/å®éšãã¯ãããŸããŠãããªæ§ããŠã£ãã°ãªãŒããŒå°çšããŒãžã補äœè²»5000å+ãŠã£ãã°ä»£2948å+ã¡ãŒã«ãŒéæ770å+å®
æ¥äŸ¿ã³ã³ãã¯ã520å+ã¡ã«ã«ãªææ°æé1026åèš10264åã«ãªãŸããŸãã1â¶ïž30 é玫â¶ïž30 éâ¶ïž10 ã©ã€ããã³ã¯â¶ïž10 ã·ãŒã«ãšã¯ã¹ãããŽã£ãžãªã¢ã³ã®ã»ããè¿ãæ°ãããã®ã§ãããããã§ããããããã³ã¯ãšã€ãžâ©ç·ææ€ããã«ãŠã£ãã°ã1.äœåããã€ã¹ãããã¯ã³ããŒã©ã³ãããã£ã©åããã¬ã€ã»ã¯ãäžãäž2.9æåæ¬ãããŸã§3.倧å€ç³ãèš³ãªãã®ã§ããã1äžå以äžãããã«ã§ããã ãæããŠããã ãããšå¹žãã§ãããããåºåPINK AGE ã¬ã€ã³ããŒããã³ã°ãŠã§ãŒã ææ€ããã«ãŠã£ãã°ããã£ã©ã®ç»åãå°çšã«èŒããŠãããŸããã¬ã€ããŒãžã6.3æ¥ä»¥å
ã«æ¯æããŸãã1ã180æåãSAã20æåãã·ãŒã«ãšã¯ã¹ããRecent Advances in Metal Oxide Semiconductor Heterojunctionsããã®åºŠã¯ãèŠç©ããé ããŸããŠãããããšãããããŸãã倧å€ãåŸ
ããããŠãããŸããã¬ã¿ãŒããã¯åœæ¥çºéãã·ãŒã«ãšã¯ã¹ããã€ã³ããŒã«ã©ãŒãOKâ¡ãã©ãã³ãã§ã« ãŠã£ãã° å¡ã®äžã®ã©ãã³ãã§ã« ãããŠã£ã³ Dãã ä»®è£
ãå°ããäºç®ãªãŒãããŠããŸããŸãç³ãèš³ãããŸããããè²ã®ãæå®ãããããšãããããŸããN.B.A.A. ãã©ãŠã³ãã³ã°ãŠã£ãã°ãããããæ§ããæ€èšãã ããã¯ãããŸããŠããŠã£ãã°ã®è£œäœãããŠããã ãããããèŠç©ããããé¡ãããŸãããããæ§ ãŠã£ãã°ãªãŒã㌠ãèŠç©ããããŒãžãã¬ã¿ãŒããã¯ãM1Ã60MBÃ30çœÃ30 ã·ãŒã«ãšã¯ã¹ãã4.ã¡äžã«äžã¯ã¢ã·ã¹ããè²ã¯æå®ã¯ãªãã§ããå»ççšãŠã£ãã°ã3y/80ã·ãŒã«ãšã¯ã¹ããããããã5.ã§ããã ãèªç¶ãªæãã«ããŠããã ãããã®ã§ãããå±å€ã§äœ¿ãã®ã§ãªãã¹ã厩ããªãããã«åºãããããšããã¯åºããŠããã ãããã§ãããªäžãäžãåããŠãªã®ã§ææ§ãªè¡šçŸã«ãªã£ãŠããŸãç³ãèš³ããããŸããã人æ¯100% ãµã©ãµã© ã¹ãã¬ãŒã ã»ããã³ã° ãŠã£ãã° ãã€ã M38ãã®ãããå°çš 10/5ãŸã§ã«â¢ããããããé¡ãããããŸãã
åãã«ããŽãªã® ååãæ¢ã
ãã®ååãèŠã人ã¯ãããªååãèŠãŠããŸã
-
ãã€ã¹ãã¢åšåº«ïŒ
1971
-
ãã€ã¹ãã¢åšåº«ïŒ
3096
-
ãã€ã¹ãã¢åšåº«ïŒ
4452
-
ãã€ã¹ãã¢åšåº«ïŒ
2348
-
ãã€ã¹ãã¢åšåº«ïŒ
3450
çŸåšã3510ä»¶ã®ã¬ãã¥ãŒãæçš¿ãããŠããŸãã
ã¬ãã¥ãŒãæçš¿ããã«ã¯ãã°ã€ã³ãå¿
èŠã§ãã